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| MBT3906DW1T1 Dual General Purpose Transistor The MBT3906DW1T1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium. Features http://onsemi.com (3) (2) (1) * * * * * * * hFE, 100-300 Low VCE(sat), 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7-inch/3,000 Unit Tape and Reel Pb-Free Package is Available Q1 Q2 (4) (5) (6) 1 MAXIMUM RATINGS Rating Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current - Continuous Electrostatic Discharge Symbol VCEO VCBO VEBO IC ESD Value -40 -40 -5.0 -200 HBM>16000, MM>2000 Unit Vdc Vdc Vdc mAdc V 6 A2d 1 SOT-363/SC-88 CASE 419B STYLE 1 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Total Package Dissipation (Note 1) TA = 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Range Symbol PD RqJA TJ, Tstg Max 150 833 -55 to +150 Unit mW A2 = Device Code d = Date Code ORDERING INFORMATION C/W C Device MBT3906DW1T1 MBT3906DW1T1G Package SOT-363 SOT-363 (Pb-Free) Shipping 3000 Units/Reel 3000 Units/Reel 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2005 1 January, 2005 - Rev. 1 Publication Order Number: MBT3906DW1T1/D MBT3906DW1T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (Note 2) Collector -Base Breakdown Voltage Emitter -Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX -40 -40 -5.0 - - - - - -50 -50 Vdc Vdc Vdc nAdc nAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = -0.1 mAdc, VCE = -1.0 Vdc) (IC = -1.0 mAdc, VCE = -1.0 Vdc) (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -50 mAdc, VCE = -1.0 Vdc) (IC = -100 mAdc, VCE = -1.0 Vdc) Collector -Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) Base -Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) hFE 60 80 100 60 30 VCE(sat) - - VBE(sat) -0.65 - -0.85 -0.95 -0.25 -0.4 Vdc - - 300 - - Vdc - SMALL-SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product Output Capacitance Input Capacitance 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. fT Cobo Cibo 250 - - - 4.5 10.0 MHz pF pF ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Input Impedance (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) Small -Signal Current Gain (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) Output Admittance (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) Noise Figure (VCE = -5.0 Vdc, IC = -100 mAdc, RS = 1.0 k W, f = 1.0 kHz) Symbol hie hre hfe hoe NF Min 2.0 0.1 100 3.0 - Max 12 10 400 60 4.0 Unit kW X 10- 4 - mmhos dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = -3.0 Vdc, VBE = 0.5 Vdc) (IC = -10 mAdc, IB1 = -1.0 mAdc) (VCC = -3.0 Vdc, IC = -10 mAdc) (IB1 = IB2 = -1.0 mAdc) td tr ts tf - - - - 35 35 225 75 ns ns http://onsemi.com 2 MBT3906DW1T1 3V +9.1 V 275 < 1 ns +0.5 V 10 k 0 Cs < 4 pF* 10.6 V 300 ns DUTY CYCLE = 2% 10 < t1 < 500 ms DUTY CYCLE = 2% * Total shunt capacitance of test jig and connectors t1 10.9 V 1N916 Cs < 4 pF* 10 k < 1 ns 275 3V Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ = 25C TJ = 125C 10 7.0 CAPACITANCE (pF) Q, CHARGE (pC) 5.0 Cobo Cibo 3.0 2.0 5000 3000 2000 1000 700 500 300 200 100 70 50 VCC = 40 V IC/IB = 10 QT QA 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS (VOLTS) 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 Figure 3. Capacitance 500 300 200 100 70 50 30 20 10 7 5 IC/IB = 10 500 300 200 Figure 4. Charge Data VCC = 40 V IB1 = IB2 IC/IB = 20 t f , FALL TIME (ns) 100 70 50 30 20 10 7 5 IC/IB = 10 TIME (ns) tr @ VCC = 3.0 V 15 V 40 V 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn -On Time Figure 6. Fall Time http://onsemi.com 3 MBT3906DW1T1 TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = - 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) 5.0 SOURCE RESISTANCE = 200 W IC = 1.0 mA NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 2.0 k IC = 50 mA 12 f = 1.0 kHz 10 IC = 0.5 mA 8 6 4 2 0 IC = 50 mA IC = 100 mA IC = 1.0 mA NF, NOISE FIGURE (dB) 4.0 3.0 2.0 SOURCE RESISTANCE = 2.0 k IC = 100 mA 0.2 0.4 1.0 2.0 4.0 10 f, FREQUENCY (kHz) 20 40 100 1.0 0 0.1 0.1 0.2 0.4 1.0 2.0 4.0 10 20 Rg, SOURCE RESISTANCE (k OHMS) 40 100 Figure 7. Figure 8. h PARAMETERS (VCE = - 10 Vdc, f = 1.0 kHz, TA = 25C) 300 hoe, OUTPUT ADMITTANCE (m mhos) 100 70 50 30 20 h fe , DC CURRENT GAIN 200 100 70 50 10 7 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 9. Current Gain 20 h ie , INPUT IMPEDANCE (k OHMS) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 hre , VOLTAGE FEEDBACK RATIO (x 10 -4) 10 7.0 5.0 3.0 2.0 Figure 10. Output Admittance 1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 11. Input Impedance Figure 12. Voltage Feedback Ratio http://onsemi.com 4 MBT3906DW1T1 TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN (NORMALIZED) 2.0 TJ = +125C 1.0 0.7 0.5 0.3 0.2 +25C -55 C VCE = 1.0 V 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 70 100 200 Figure 13. DC Current Gain VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 14. Collector Saturation Region TJ = 25C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V q V , TEMPERATURE COEFFICIENTS (mV/ C) 1.0 1.0 0.5 0 -0.5 +25C TO +125C -1.0 -1.5 -2.0 qVB FOR VBE(sat) -55 C TO +25C qVC FOR VCE(sat) +25C TO +125C -55 C TO +25C 0.6 0.4 VCE(sat) @ IC/IB = 10 0.2 0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 0 20 40 60 80 100 120 140 IC, COLLECTOR CURRENT (mA) 160 180 200 Figure 15. "ON" Voltages Figure 16. Temperature Coefficients http://onsemi.com 5 MBT3906DW1T1 PACKAGE DIMENSIONS SOT-363/SC-88 CASE 419B-02 ISSUE U A G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --- 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --- 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 6 5 4 S 1 2 3 -B- D 6 PL 0.2 (0.008) M B N M DIM A B C D G H J K N S J C STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 H K SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 MBT3906DW1T1/D |
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